SKU: 25640
IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
20,00 EGP
IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 8A
- Gate threshold voltage (VGS-th) is 10V (limit = ?20V)
- Drain to Source Breakdown Voltage: 500V
- Drain Source Resistance (RDS) is 0.85 Ohms
- Rise time and fall time is 23nS and 20nS
- Available in To-220 package
In stock
Description
IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
Attribute | Value |
Channel Type | N |
Maximum Continuous Drain Current | 8 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 850 m? |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 125 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Height | 9.01mm |
Typical Gate Charge @ Vgs | 38 nC @ 10 V |
Minimum Operating Temperature | -55 ?C |
Width | 4.7mm |
Transistor Material | Si |
Length | 10.41mm |
Maximum Operating Temperature | +150 ?C |
Package Includes:
- 1x IRF840 MOSFET
Datasheet:
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