SKU: 25637

IRF640 N-Channel Power MOSFET 200V ,18A ,125W

15,00 EGP

IRF640 N-Channel Power MOSFET 200V ,18A ,125W

  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 18A
  • Drain to Source Breakdown Voltage: 200V
  • Drain Source Resistance (RDS) is 0.15 Ohms
  • Available in To-220 package

In stock

SKU: 25637 Category:

Description

IRF640 N-Channel Power MOSFET 200V ,18A ,125W

Specifications:

AttributeValue
Channel TypeN
Maximum Continuous Drain Current18 A
Maximum Drain Source Voltage200 V
Package TypeTO-220AB
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance150 m?
Channel ModeEnhancement
Maximum Gate Threshold Voltage4V
Minimum Gate Threshold Voltage2V
Maximum Power Dissipation150 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-20 V, +20 V
Maximum Operating Temperature+175 ?C
Number of Elements per Chip1
Typical Gate Charge @ Vgs67 nC @ 10 V
Transistor MaterialSi
SeriesHEXFET
Height8.77mm
Minimum Operating Temperature-55 ?C

Package Includes:

  • 1x IRF640 MOSFET

Datasheet:

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