IRF640 N-Channel Power MOSFET 200V ,18A ,125W N-Channel Power MOSFET Continuous Drain Current (ID): 18A Drain to Source Breakdown Voltage: 200V Drain Source Resistance (RDS) is 0.15 Ohms Available in To-220 package
IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220 N-Channel Power MOSFET Continuous Drain Current (ID): 8A Gate threshold voltage (VGS-th) is 10V (limit = ?20V) Drain to Source Breakdown Voltage: 500V Drain Source Resistance (RDS) is 0.85 Ohms Rise time and fall time is 23nS and 20nS Available in To-220 package
2SC2625 NPN Power Transistors 400V - 10A Type -?NPN Collector-Emitter Voltage:?400?V Collector-Base Voltage:?450?V Emitter-Base Voltage:?7?V Collector Current:?10?A Collector Dissipation -?80?W DC Current Gain (hfe) - 10 Operating and Storage Junction Temperature Range?-55 to +150??C Package -?TO-3P
Measurement temperature range: -55 to +125?C Conversion Time (Max): 93.75 ms (9-bit), 750 ms (12-bit) Unique 64-bit serial code stored in on-chip ROM Power supply: +3.0 V to +5.5 VDC or from data line
