Showing 1–24 of 44 results
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13,00 EGPA1941 PNP BIPOLAR TRANSISTOR, 10 A, 140 V, 3-PIN TO-3PN
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 100 W
- Maximum Collector-Base Voltage |Vcb|: 160 V
- Maximum Collector-Emitter Voltage |Vce|: 160 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 10 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 30 MHz
- Collector Capacitance (Cc): 480 pF
- Forward Current Transfer Ratio (hFE), MIN: 55
- Noise Figure, dB: –
- Package: TO-3PN
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45,00 EGPFQA20N60 N-Channel MOSFET, 20 A, 600V, 3-Pin TO-3PN
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900,00 EGPKD221K05 Transistor Module 50A,1000V
- Isolated Mounting
- Planar Chips
- Discrete Fast Recovery Feedback Diode
- High Gain (HFE)
- Quick Connect Base-Emitter Signal Terminals
- Baser-Emitter Speed-up Diodes
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60,00 EGPFQA40N60 N-Channel MOSFET, 40 A, 600V, 3-Pin TO-3PN
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6,00 EGPBS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
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75,00 EGP40T120 IGBT N-Channel Power MOSFET 1200V, 40A, 3-Pin, TO-247
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8,50 EGPMJE13007 NPN Transistor, 8A, 400V, 3-Pin TO-220
- N-Channel Power MOSFET
- DC Collector Current: 8A
- Collector Emitter Voltage: 400V
- Emitter Base Voltage: 9V
- Available in To-220 package
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15,00 EGPIRF640 N-Channel Power MOSFET 200V ,18A ,125W
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 18A
- Drain to Source Breakdown Voltage: 200V
- Drain Source Resistance (RDS) is 0.15 Ohms
- Available in To-220 package
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20,00 EGPIRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 8A
- Gate threshold voltage (VGS-th) is 10V (limit = ?20V)
- Drain to Source Breakdown Voltage: 500V
- Drain Source Resistance (RDS) is 0.85 Ohms
- Rise time and fall time is 23nS and 20nS
- Available in To-220 package
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33,00 EGP2SC2625 NPN Power Transistors 400V – 10A
- Type -?NPN
- Collector-Emitter Voltage:?400?V
- Collector-Base Voltage:?450?V
- Emitter-Base Voltage:?7?V
- Collector Current:?10?A
- Collector Dissipation -?80?W
- DC Current Gain (hfe) – 10
- Operating and Storage Junction Temperature Range?-55 to +150??C
- Package -?TO-3P
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20,00 EGPIRF3710 57A, 100V, 0.0023 Ohm, N-Channel Power MOSFET
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1,00 EGPBC548 NPN Transistor, 100 mA, 30 V, 3-Pin TO-92
Bipolar (BJT) Transistor NPN 30V, 100 mA, 300MHz, 500mW, Through Hole TO-92-3
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20,00 EGPTIP147 PNP Darlington Transistor, 10A, 100V, 3-Pin TO-247
Bipolar (BJT) Transistor PNP – Darlington 100 V 10 A – 125 W Through Hole TO-247
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15,00 EGPIRF644 N-Channel MOSFET – 14A,250V, 3-Pin TO-220
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18,00 EGPIRF3205, 110A, 55V, 0.008 Ohm, N-Channel Power MOSFET
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15,00 EGPTIP140 NPN Darlington Transistor, 10A 60V, 3-Pin TO-247
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7,00 EGPTIP48 NPN Transistor, 1A, 300V, 3-Pin TO-220
Bipolar (BJT) Transistor NPN 400 V 1 A 10MHz 40 W Through Hole TO-220-3
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35,00 EGPMeasurement temperature range: -55 to +125?C
Conversion Time (Max): 93.75 ms (9-bit), 750 ms (12-bit)
Unique 64-bit serial code stored in on-chip ROM
Power supply: +3.0 V to +5.5 VDC or from data line
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7,00 EGPTIP120 NPN Darlington Transistor, 8A, 60V, 3-Pin TO-220
Bipolar (BJT) Transistor NPN – Darlington 60 V 4MHz Through Hole TO-220-3
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3,50 EGPBC108 NPN General Purpose Transistor 0.1A, 30V, 3-Pin TO-92
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5,00 EGPBC107 NPN Bipolar Transistor 45V, 100mA
Bipolar (BJT) Transistor NPN 45 V 100 mA – 300 mW Through Hole TO-92
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1,00 EGPBC558 PNP Epitaxial Silicon Transistor Switching and Amplifier (30V ,100mA ,500mW)
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1,00 EGPBC549, (0.1A,30V) NPN General Purpose Transistor.
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1,00 EGPBC337 NPN Transistor, 800 mA, 45 V, 3-Pin TO-92
