KD221K05 Transistor Module 50A,1000V
900,00 EGPKD221K05 Transistor Module 50A,1000V
- Isolated Mounting
- Planar Chips
- Discrete Fast Recovery Feedback Diode
- High Gain (HFE)
- Quick Connect Base-Emitter Signal Terminals
- Baser-Emitter Speed-up Diodes
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KD221K05 Transistor Module 50A,1000V
FQA40N60 N-Channel MOSFET, 40 A, 600V, 3-Pin TO-3PN
BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92
40T120 IGBT N-Channel Power MOSFET 1200V, 40A, 3-Pin, TO-247
MJE13007 NPN Transistor, 8A, 400V, 3-Pin TO-220
IRF640 N-Channel Power MOSFET 200V ,18A ,125W
IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
2SC2625 NPN Power Transistors 400V – 10A
BC548 NPN Transistor, 100 mA, 30 V, 3-Pin TO-92
Bipolar (BJT) Transistor NPN 30V, 100 mA, 300MHz, 500mW, Through Hole TO-92-3
TIP147 PNP Darlington Transistor, 10A, 100V, 3-Pin TO-247
Bipolar (BJT) Transistor PNP – Darlington 100 V 10 A – 125 W Through Hole TO-247
TIP140 NPN Darlington Transistor, 10A 60V, 3-Pin TO-247
TIP48 NPN Transistor, 1A, 300V, 3-Pin TO-220
Bipolar (BJT) Transistor NPN 400 V 1 A 10MHz 40 W Through Hole TO-220-3
Measurement temperature range: -55 to +125?C
Conversion Time (Max): 93.75 ms (9-bit), 750 ms (12-bit)
Unique 64-bit serial code stored in on-chip ROM
Power supply: +3.0 V to +5.5 VDC or from data line
TIP120 NPN Darlington Transistor, 8A, 60V, 3-Pin TO-220
Bipolar (BJT) Transistor NPN – Darlington 60 V 4MHz Through Hole TO-220-3
BC108 NPN General Purpose Transistor 0.1A, 30V, 3-Pin TO-92
BC558 PNP Epitaxial Silicon Transistor Switching and Amplifier (30V ,100mA ,500mW)
General Purpose N-Channel Power MOSFET Transistor 55V , 17.5 mohm , 49A in TO-220 Package.
General Purpose P-Channel MOSFET Transistor (-100V) , 0.117ohm , (-23A) in TO-220 Package.
General Purpose P-Channel MOSFET Transistor (-100V) , 0.30 ohm , (-12A) in TO-220 Package.