SKU: 25637

IRF640 N-Channel Power MOSFET 200V ,18A ,125W

IRF640 N-Channel Power MOSFET 200V ,18A ,125W

  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 18A
  • Drain to Source Breakdown Voltage: 200V
  • Drain Source Resistance (RDS) is 0.15 Ohms
  • Available in To-220 package

11,50 EGP

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SKU: 25637 Category:

Description

IRF640 N-Channel Power MOSFET 200V ,18A ,125W

Specifications:

Attribute Value
Channel Type N
Maximum Continuous Drain Current 18 A
Maximum Drain Source Voltage 200 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 150 m?
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 150 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +175 ?C
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 67 nC @ 10 V
Transistor Material Si
Series HEXFET
Height 8.77mm
Minimum Operating Temperature -55 ?C

Package Includes:

  • 1x IRF640 MOSFET

Datasheet:

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