SKU: 26113

FQA40N60 N-Channel MOSFET, 40 A, 600V, 3-Pin TO-3PN

FQA40N60 N-Channel MOSFET, 40 A, 600V, 3-Pin TO-3PN

60,00 EGP

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SKU: 26113 Category:

Description

FQA40N60 N-Channel MOSFET, 40 A, 600V, 3-Pin TO-3PN

Fairchild Semiconductor?s new QFET? planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET? process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Specifications:

Attribute Value
Channel Type N
Maximum Continuous Drain Current 40 A
Maximum Drain Source Voltage 250 V
Package Type TO-3PN
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 70 m?
Channel Mode Enhancement
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 280 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Width 5mm
Maximum Operating Temperature +150 ?C
Length 15.8mm
Transistor Material Si
Typical Gate Charge @ Vgs 85 nC @ 10 V
Minimum Operating Temperature -55 ?C
Height 18.9mm
Series QFET

Package Includes:

  • 1x FQA40N6 MOSFET

Datasheet:

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