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BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92
BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
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6,00EGP
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Description
BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92
The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Specifications:
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 500 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 ? |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 830 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.19mm |
| Transistor Material | Si |
| Length | 5.2mm |
| Maximum Operating Temperature | +150 ?C |
| Height | 5.33mm |
| Minimum Operating Temperature | -55 ?C |
Package Includes:
- 1x BS170 N-Channel MOSFET
Datasheet:
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