SKU: 26061

BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92

BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92

  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability

6,00 EGP

In stock

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Description

BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability

Specifications:

Attribute Value
Channel Type N
Maximum Continuous Drain Current 500 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5 ?
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 830 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 4.19mm
Transistor Material Si
Length 5.2mm
Maximum Operating Temperature +150 ?C
Height 5.33mm
Minimum Operating Temperature -55 ?C

Package Includes:

  • 1x BS170 N-Channel MOSFET

Datasheet:

Related Products:

BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92

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